DocumentCode
3166533
Title
Ultrathin resist pattern transfer process by filling mask material in the resist pattern
Author
Kato, H. ; Matsunaga, K. ; Abe, J. ; Onishi, Y.
Author_Institution
Semicond. Co., Toshiba Corp., Yokohama, Japan
fYear
2002
fDate
6-8 Nov. 2002
Firstpage
284
Lastpage
285
Abstract
The authors propose a multi-layer resist process whose distinctive feature is filling mask material in the resist pattern. Because this process does not need etch resistance for the resist film, it is favorable for the thin resist pattern transfer process. They show and discuss the results of ultrathin resist pattern transfer experiments.
Keywords
etching; lithography; masks; resists; etch resistance; filling mask material; multi-layer resist process; resist film; resist pattern; ultrathin resist pattern transfer; Electron beams; Etching; Filling; Lithography; Manufacturing processes; Resists; Semiconductor device manufacture; Semiconductor films; Semiconductor materials; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Microprocesses and Nanotechnology Conference, 2002. Digest of Papers. Microprocesses and Nanotechnology 2002. 2002 International
Conference_Location
Tokyo, Japan
Print_ISBN
4-89114-031-3
Type
conf
DOI
10.1109/IMNC.2002.1178654
Filename
1178654
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