Title :
Lossless InAsP/InGaP modulator at 1.3 μm for optical conversion of radio signals up to 40 GHz
Author :
Devaux, F. ; Ougazzaden ; Huet, F. ; Carré, M.
Author_Institution :
Branche Dev., CNET, Bagneux, France
Abstract :
An InAsP-InGaP electroabsorption modulator at 1.3 μm integrated with a semiconductor amplifier exhibits a 10 fibre-to-fibre insertion gain, 36 GHz bandwidth and 3 V drive voltage. A RF link efficiency of -26 dB at 20 GHz was demonstrated without any external amplification
Keywords :
indium compounds; 1.3 mum; 10 dB; 3 V; 36 GHz; InAsP-InGaP; InAsP-InGaP lossless electroabsorption modulator; RF link efficiency; drive voltage; fibre-to-fibre insertion gain; integrated optics; laser diodes; optical communication equipment; optical conversion; radio signal conversion; semiconductor optical amplifier;
Conference_Titel :
Integrated Optics and Optical Fibre Communications, 11th International Conference on, and 23rd European Conference on Optical Communications (Conf. Publ. No.: 448)
Conference_Location :
Edinburgh
Print_ISBN :
0-85296-697-0
DOI :
10.1049/cp:19971407
