• DocumentCode
    316682
  • Title

    Lossless InAsP/InGaP modulator at 1.3 μm for optical conversion of radio signals up to 40 GHz

  • Author

    Devaux, F. ; Ougazzaden ; Huet, F. ; Carré, M.

  • Author_Institution
    Branche Dev., CNET, Bagneux, France
  • Volume
    2
  • fYear
    1997
  • fDate
    22-25 Sep 1997
  • Firstpage
    21
  • Abstract
    An InAsP-InGaP electroabsorption modulator at 1.3 μm integrated with a semiconductor amplifier exhibits a 10 fibre-to-fibre insertion gain, 36 GHz bandwidth and 3 V drive voltage. A RF link efficiency of -26 dB at 20 GHz was demonstrated without any external amplification
  • Keywords
    indium compounds; 1.3 mum; 10 dB; 3 V; 36 GHz; InAsP-InGaP; InAsP-InGaP lossless electroabsorption modulator; RF link efficiency; drive voltage; fibre-to-fibre insertion gain; integrated optics; laser diodes; optical communication equipment; optical conversion; radio signal conversion; semiconductor optical amplifier;
  • fLanguage
    English
  • Publisher
    iet
  • Conference_Titel
    Integrated Optics and Optical Fibre Communications, 11th International Conference on, and 23rd European Conference on Optical Communications (Conf. Publ. No.: 448)
  • Conference_Location
    Edinburgh
  • ISSN
    0537-9989
  • Print_ISBN
    0-85296-697-0
  • Type

    conf

  • DOI
    10.1049/cp:19971407
  • Filename
    628021