Direct comparison of Si/High-K and Si/SiO2 channels in advanced FD SOI MOSFETs

Author

Pham-Nguyen, L. ; Fenouillet-Beranger, C. ; Vandooren, A. ; Wild, A. ; Ghibaudo, G. ; Cristoloveanu, S.

Author_Institution

IMEP-INPG MINATEC, Grenoble

fYear

2008

fDate

6-9 Oct. 2008

Firstpage

25

Lastpage

26

Abstract

Detailed measurements of front and back channel characteristics in advanced SOI MOSFETs (ultrathin film, metal gate, selective epitaxy of source/drain) are used to reveal the transport properties at the corresponding Si/high-K (HfO₂/HfSiON) and Si/SiO₂ interfaces. Low-temperature operation magnifies the difference between these two interfaces in terms of carrier mobility, threshold voltage and subthreshold swing. As compared to Si/SiO₂, the mobility is lower at the Si/high-K interface and increases less rapidly at low temperature, reflecting additional scattering mechanisms governed by high-K and neutral defects.

Keywords

MOSFET; carrier mobility; hafnium compounds; high-k dielectric thin films; silicon; silicon compounds; silicon-on-insulator; FD SOI MOSFET; Si-HfO₂; Si-HfSiON; Si-SiO₂; carrier mobility; high-K interface; neutral defects; scattering mechanisms; threshold voltage; transport properties; ultrathin film; Acoustic scattering; Dielectric measurements; Epitaxial growth; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; MOSFETs; Phonons; Semiconductor films; Temperature dependence;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 2008. SOI. IEEE International

Conference_Location

New Paltz, NY

ISSN

1078-621X

Print_ISBN

978-1-4244-1954-8

Electronic_ISBN

1078-621X

Type

conf

DOI

10.1109/SOI.2008.4656277

Filename

4656277