DocumentCode
3167102
Title
Evaluation and alleviation of SOI impacts on SRAM functionality and yield
Author
Pelella, Antonio R. ; Joshi, Rajiv ; Kanj, Rouwaida
Author_Institution
STG, IBM, Poughkeepsie, NY
fYear
2008
fDate
6-9 Oct. 2008
Firstpage
41
Lastpage
42
Abstract
Super fast Monte-Carlo techniques are applied to allow deeper insight to the yield of SOI domino circuit design techniques for SRAMs. For the first time, Read-before-Write in dual supply domino bit-select design is analyzed in the presence of floating body effects, hysteretic and process variations. The methodology provides greater ability to alleviate non-functionality by identifying yield-optimized operating ranges.
Keywords
Monte Carlo methods; SRAM chips; circuit optimisation; integrated circuit design; integrated circuit yield; silicon-on-insulator; Monte-Carlo techniques; SOI impacts; SRAM functionality; circuit design techniques; dual supply domino bit-select design; floating body effects; hysteretic variations; read-before-write; yield-optimization; Circuit simulation; Coupling circuits; Degradation; Delay; Hysteresis; Monte Carlo methods; Random access memory; Signal design; Statistical analysis; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
SOI Conference, 2008. SOI. IEEE International
Conference_Location
New Paltz, NY
ISSN
1078-621X
Print_ISBN
978-1-4244-1954-8
Electronic_ISBN
1078-621X
Type
conf
DOI
10.1109/SOI.2008.4656285
Filename
4656285
Link To Document