DocumentCode :
3167102
Title :
Evaluation and alleviation of SOI impacts on SRAM functionality and yield
Author :
Pelella, Antonio R. ; Joshi, Rajiv ; Kanj, Rouwaida
Author_Institution :
STG, IBM, Poughkeepsie, NY
fYear :
2008
fDate :
6-9 Oct. 2008
Firstpage :
41
Lastpage :
42
Abstract :
Super fast Monte-Carlo techniques are applied to allow deeper insight to the yield of SOI domino circuit design techniques for SRAMs. For the first time, Read-before-Write in dual supply domino bit-select design is analyzed in the presence of floating body effects, hysteretic and process variations. The methodology provides greater ability to alleviate non-functionality by identifying yield-optimized operating ranges.
Keywords :
Monte Carlo methods; SRAM chips; circuit optimisation; integrated circuit design; integrated circuit yield; silicon-on-insulator; Monte-Carlo techniques; SOI impacts; SRAM functionality; circuit design techniques; dual supply domino bit-select design; floating body effects; hysteretic variations; read-before-write; yield-optimization; Circuit simulation; Coupling circuits; Degradation; Delay; Hysteresis; Monte Carlo methods; Random access memory; Signal design; Statistical analysis; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
SOI Conference, 2008. SOI. IEEE International
Conference_Location :
New Paltz, NY
ISSN :
1078-621X
Print_ISBN :
978-1-4244-1954-8
Electronic_ISBN :
1078-621X
Type :
conf
DOI :
10.1109/SOI.2008.4656285
Filename :
4656285
Link To Document :
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