Title :
A novel noise parameters extraction technique for microwave packaged FET
Author :
Gu, Kaijun ; Le-Ngoc, Son
Author_Institution :
Fac. of Eng. & Appl. Sci., Memorial Univ. of Newfoundland, St. John´´s, Nfld., Canada
Abstract :
In this paper, a novel noise parameters extraction technique for microwave packaged FET is proposed. The noise parameters of packaged FET for the entire operating frequency band can be obtained from the four noise parameters measured at a single frequency or a few frequencies. The predicated results obtained with this method agree well with the measured data. As a result, the novel noise parameters extraction technique can be used to predict the noise with a minimum effort
Keywords :
equivalent circuits; microwave field effect transistors; semiconductor device models; semiconductor device noise; semiconductor device packaging; microwave packaged FET; noise parameters extraction technique; Equivalent circuits; Microwave FETs; Semiconductor device modeling; Semiconductor device noise; Semiconductor device packaging;
Conference_Titel :
Electrical and Computer Engineering, 1994. Conference Proceedings. 1994 Canadian Conference on
Conference_Location :
Halifax, NS
Print_ISBN :
0-7803-2416-1
DOI :
10.1109/CCECE.1994.405813
