Design of a Distributed Oscillator in 130 nm SOI MOS Technology

Author

Moussa, M. Si ; Pavageau, C. ; Picheta, L. ; Danneville, F. ; Russat, J. ; Fel, N. ; Raskin, J.-P. ; Vanhoenacker-Janvier, D.

Author_Institution

Microwave Lab., Univ. Catholique de Louvain, Louvain-la-Neuve

fYear

2006

fDate

10-15 Sept. 2006

Firstpage

1526

Lastpage

1529

Abstract

In this paper, the design and the results of a silicon-on-insulator (SOI) CMOS distributed amplifier (DA) and oscillator are presented. The four stage cascode DA (CDA) is designed with a 130 nm SOI floating body n-MOSFET in each stage requiring a chip area of 0.75 mm². A gain of 7 dB and a unity-gain bandwidth of 26 GHz are measured at 1.4 V supply voltage with a measured power consumption of 54 mW. The CDA circuit has been extended to design a cascode distributed oscillator (CDO) showing a 3 dBm carrier at 10 GHz oscillating frequency, for 2.5 V supply voltage

Keywords

CMOS integrated circuits; differential amplifiers; microwave amplifiers; microwave oscillators; silicon-on-insulator; 1.4 V; 10 GHz; 130 nm; 2.5 V; 26 GHz; 54 mW; 7 dB; SOI MOS technology; SOI floating body n-MOSFET; cascode distributed oscillator; four stage cascode distributed amplifier; silicon-on-insulator CMOS distributed amplifier; Bandwidth; CMOS technology; Distributed amplifiers; Gain measurement; MOSFET circuits; Oscillators; Power measurement; Semiconductor device measurement; Silicon on insulator technology; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2006. 36th European

Conference_Location

Manchester

Print_ISBN

2-9600551-6-0

Type

conf

DOI

10.1109/EUMC.2006.281369

Filename

4058131