Title :
Design of a Distributed Oscillator in 130 nm SOI MOS Technology
Author :
Moussa, M. Si ; Pavageau, C. ; Picheta, L. ; Danneville, F. ; Russat, J. ; Fel, N. ; Raskin, J.-P. ; Vanhoenacker-Janvier, D.
Author_Institution :
Microwave Lab., Univ. Catholique de Louvain, Louvain-la-Neuve
Abstract :
In this paper, the design and the results of a silicon-on-insulator (SOI) CMOS distributed amplifier (DA) and oscillator are presented. The four stage cascode DA (CDA) is designed with a 130 nm SOI floating body n-MOSFET in each stage requiring a chip area of 0.75 mm2. A gain of 7 dB and a unity-gain bandwidth of 26 GHz are measured at 1.4 V supply voltage with a measured power consumption of 54 mW. The CDA circuit has been extended to design a cascode distributed oscillator (CDO) showing a 3 dBm carrier at 10 GHz oscillating frequency, for 2.5 V supply voltage
Keywords :
CMOS integrated circuits; differential amplifiers; microwave amplifiers; microwave oscillators; silicon-on-insulator; 1.4 V; 10 GHz; 130 nm; 2.5 V; 26 GHz; 54 mW; 7 dB; SOI MOS technology; SOI floating body n-MOSFET; cascode distributed oscillator; four stage cascode distributed amplifier; silicon-on-insulator CMOS distributed amplifier; Bandwidth; CMOS technology; Distributed amplifiers; Gain measurement; MOSFET circuits; Oscillators; Power measurement; Semiconductor device measurement; Silicon on insulator technology; Voltage;
Conference_Titel :
Microwave Conference, 2006. 36th European
Conference_Location :
Manchester
Print_ISBN :
2-9600551-6-0
DOI :
10.1109/EUMC.2006.281369
