• DocumentCode
    3167158
  • Title

    PD-SOI MOSFET Body-to-Body leakage scaling trend and optimization

  • Author

    Lo, H.C. ; Luo, W.C. ; Lu, W.Y. ; Cheng, C.F. ; Wu, Benny ; Chen, T.L. ; Lien, C.H. ; Fung, Samuel K H ; Tuan, H.C.

  • Author_Institution
    R&D, Taiwan Semicond. Manuf. Co. Ltd., Hsinchu
  • fYear
    2008
  • fDate
    6-9 Oct. 2008
  • Firstpage
    49
  • Lastpage
    50
  • Abstract
    Body-to-Body leakage (BBL) in stacked transistor configuration has been characterized by different back gate biases (Vbg), SOI thicknesses, and poly spacings. BBL increases significantly from 65 nm to 45 nm node mainly due to smaller poly spacing and shallower S/D junctions. By implant optimization and reduction of the SOI thickness, BBL can be reduced below reverse junction leakage level.
  • Keywords
    MOSFET; leakage currents; optimisation; silicon-on-insulator; PD-SOI MOSFET; body-to-body leakage scaling; optimization; shallower S-D junctions; stacked transistor configuration; Capacitance; Cities and towns; Conference proceedings; Fabrication; Germanium silicon alloys; Implants; MOSFET circuits; Research and development; Semiconductor device manufacture; Silicon germanium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference, 2008. SOI. IEEE International
  • Conference_Location
    New Paltz, NY
  • ISSN
    1078-621X
  • Print_ISBN
    978-1-4244-1954-8
  • Electronic_ISBN
    1078-621X
  • Type

    conf

  • DOI
    10.1109/SOI.2008.4656288
  • Filename
    4656288
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3167158