A Novel Wideband GaAs FET Source Injected Distributed Mixer

Author

Shastry, P.N. ; Cullerton, Edward

Author_Institution

Dept. of Electr. & Comput. Eng., Bradley Univ., Peoria, IL

fYear

2006

fDate

10-15 Sept. 2006

Firstpage

1533

Lastpage

1536

Abstract

In this paper, the design and measured results of a novel wideband distributed architecture GaAs FET mixer in which the LO signal is injected into the mixer through the source terminals of FETs are presented. The prototype MESFET source injected distributed mixer has a conversion gain (without IF signal amplification) varying from -8 to -3.5 dB in the range 1 to 3 GHz. It has good return losses at all ports, and excellent isolation between the three ports, in the range 1 to 3 GHz. The mixer requires a DC voltage of only 1.5 V and operates with less than 12 mA current. The topology of this mixer is suitable for monolithic implementation

Keywords

III-V semiconductors; Schottky gate field effect transistors; UHF mixers; gallium arsenide; 1 to 3 GHz; 1.5 V; GaAs; LO signal; MESFET source injected distributed mixer; active mixer; field effect transistors; wideband FET source injected distributed mixer; wideband distributed architecture FET mixer; Diodes; FETs; Gallium arsenide; Mixers; Prototypes; RF signals; Radio frequency; Signal design; Topology; Wideband; Active Mixer; Distributed Mixer; GaAs FET Mixer; Source Injected Mixer; Wideband Mixer;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2006. 36th European

Conference_Location

Manchester

Print_ISBN

2-9600551-6-0

Type

conf

DOI

10.1109/EUMC.2006.281371

Filename

4058133