• DocumentCode
    3167206
  • Title

    The low subthreshold swing possibility with asymmetries in double-gate SOI MOSFET

  • Author

    Shih, Kun-Huan ; Chui, Chi On

  • Author_Institution
    Dept. of Electr. Eng., California Univ., Los Angeles, CA
  • fYear
    2008
  • fDate
    6-9 Oct. 2008
  • Firstpage
    53
  • Lastpage
    54
  • Abstract
    Both structural and bias asymmetries in double-gate (DG) SOI MOSFET have been critically examined for the sub-60 mV/dec subthreshold swing (SS) possibility. Physical mechanisms are illustrated to explain the inability of all the analyzed structural asymmetries and the feasibility with the bias asymmetries.
  • Keywords
    MOSFET; hydrodynamics; semiconductor device models; silicon-on-insulator; Si; bias asymmetries; double-gate SOI MOSFET; hydrodynamic simulations; physical mechanisms; structural asymmetries; subthreshold swing possibility; Conference proceedings; Decision support systems; MOSFET circuits; Virtual reality;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference, 2008. SOI. IEEE International
  • Conference_Location
    New Paltz, NY
  • ISSN
    1078-621X
  • Print_ISBN
    978-1-4244-1954-8
  • Electronic_ISBN
    1078-621X
  • Type

    conf

  • DOI
    10.1109/SOI.2008.4656290
  • Filename
    4656290
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3167206