Consistent dynamic depletion model of SOI-MOSFETs for device/circuit optimization

We report the potential-based SOI-MOSFET model HiSIM-SOI, which solves the three surface potentials of the SOI-device accurately without sacrificing simulation time. The model implements the bias dependent dynamic depletion behavior, shifting between partially-depleted (PD) and fully-depleted (FD) conditions smoothly. It is also demonstrated that the floating-body effect can be accurately captured in a simple way from the calculated surface potentials without the necessity of introducing on additional node. HiSIM-SOI is also verified to correctly reproduce measured data of both body-contact and floating-body devices.