Sandwich stacks replacing SiO2 in standard bonded Si-on-Insulator (SOI) substrates to obtain a high-thermal conductivity HTC-SOI substrate

In this paper, we present numerically calculated values of thermal resistances of Si BJT (or SiGe HBT) devices fabricated on bonded SOI substrates. Different lateral isolation schemes are studied, as well as different materials for the plane buried isolator that ensures dielectric vertical isolation of the Si device to the Si substrate. More specifically, we investigated sandwich stacks to replace oxide in order to obtain so called ldquohigh thermal-conductivityrdquo or HTC-SOI substrates.