Blue-green laser diodes

Author

Gunshor, R.L. ; Han, J. ; Nurmikko, A.V.

Author_Institution

Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA

fYear

1995

fDate

7-9 Aug 1995

Firstpage

2

Lastpage

8

Abstract

The current status, as well as some key issues related to the growth and characterization of II-VI blue/green laser diodes are reviewed. The Zn(Se,Te) graded contact to p-ZnSe is effective in supporting the room-temperature CW operation of green (508 nm) laser diodes while device lifetimes are currently limited by the formation of dark defects in the active region. The role of extended and point defects in degradation will be discussed. Additional problems have arisen in the move to shorter wavelengths. For example, an observed increase of resistivity with increased bandgap energy has been associated with the formation of AX centers, a DX like behavior for acceptors

Keywords

II-VI semiconductors; semiconductor growth; semiconductor lasers; wide band gap semiconductors; zinc compounds; 508 nm; AX centers; II-VI blue-green laser diodes; Zn(Se,Te)/p-ZnSe graded contact; ZnSeTe-ZnSe; acceptors; bandgap energy; dark defects; degradation; device lifetimes; extended defects; growth; point defects; resistivity; room-temperature CW operation; Diode lasers; Electrical resistance measurement; Laser modes; Optical films; Plasma temperature; Substrates; Surface emitting lasers; Temperature control; Vertical cavity surface emitting lasers; Zinc compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

High Speed Semiconductor Devices and Circuits, 1995. Proceedings., IEEE/Cornell Conference on Advanced Concepts in

Conference_Location

Ithaca, NY

ISSN

1079-4700

Print_ISBN

0-7803-3970-3

Type

conf

DOI

10.1109/CORNEL.1995.482414

Filename

482414