Title :
Thermal characterization of Silicon-on-SiC substrates
Author :
Vallin, Ö ; Martin, D.M. ; Lu, J. ; Li, L.G. ; Smith, U. ; Norström, H. ; Olsson, J.
Author_Institution :
Angstrom Lab., Uppsala Univ., Uppsala
Abstract :
Thermal characterization of the new Si-on-SiC hybrid substrate has shown thermal properties superior in comparison with SOI. The thermal resistivity was shown to be a factor of four lower, and the lateral thermal spread was much more efficient, as is explained by the excellent heat conductivity of the SiC substrate. These results correspond well to the absence of MOSFET self-heating effects for the BaSiC. Transmission electron microscopy reveals a defect free bond and recrystallization of the amorphous silicon, which improves the heat conductivity.
Keywords :
amorphous semiconductors; elemental semiconductors; recrystallisation; silicon; thermal conductivity; transmission electron microscopy; MOSFET self-heating effects; Si; SiC; amorphous silicon; defect free bond; heat conductivity; recrystallization; silicon-on-SiC substrates; thermal characterization; thermal resistivity; transmission electron microscopy; Electrical resistance measurement; Integrated circuit measurements; MOSFETs; Resistors; Silicon carbide; Silicon on insulator technology; Temperature; Thermal conductivity; Thermal resistance; Wafer bonding;
Conference_Titel :
SOI Conference, 2008. SOI. IEEE International
Conference_Location :
New Paltz, NY
Print_ISBN :
978-1-4244-1954-8
Electronic_ISBN :
1078-621X
DOI :
10.1109/SOI.2008.4656298