Thermal characterization of Silicon-on-SiC substrates

Thermal characterization of the new Si-on-SiC hybrid substrate has shown thermal properties superior in comparison with SOI. The thermal resistivity was shown to be a factor of four lower, and the lateral thermal spread was much more efficient, as is explained by the excellent heat conductivity of the SiC substrate. These results correspond well to the absence of MOSFET self-heating effects for the BaSiC. Transmission electron microscopy reveals a defect free bond and recrystallization of the amorphous silicon, which improves the heat conductivity.