Time and frequency domain analysis of commercial GaN HEMTs operated in pulsed mode

Author

Fornetti, F. ; Beach, M.A. ; Morris, K.A.

Author_Institution

Centre for Commun. Res., Univ. of Bristol, Bristol, UK

fYear

2009

fDate

7-10 Dec. 2009

Firstpage

1601

Lastpage

1604

Abstract

The present study investigates the behaviour and performance of commercially available GaN HEMTs when used for the amplification of pulsed waveforms. A method for determining pulse width variations based on the spectrum of the amplified signal is proposed. The changes in rise and fall times are also investigated across the pulse repetition frequency (PRF) range 100-450 kHz. The influence of RF power and bias levels on such parameters is also examined. The aim of the study is to assess the suitability of commercial GaN HEMTs to pulsed RF applications such as Radar. The RF frequency at which the study is conducted is 3.5 GHz.

Keywords

III-V semiconductors; frequency-domain analysis; gallium compounds; high electron mobility transistors; microwave field effect transistors; time-domain analysis; wide band gap semiconductors; GaN; HEMTs; fall time; frequency 100 kHz to 450 kHz; frequency 3.5 GHz; frequency domain analysis; pulse repetition frequency; pulsed RF applications; pulsed waveform amplification; radar; rise time; time domain analysis; Frequency domain analysis; Gallium nitride; HEMTs; MODFETs; Power amplifiers; Power generation; Pulse amplifiers; Radio frequency; Radiofrequency amplifiers; Voltage; GaN; HEMTs; Radar; power amplifiers; pulsed RF;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2009. APMC 2009. Asia Pacific

Conference_Location

Singapore

Print_ISBN

978-1-4244-2801-4

Electronic_ISBN

978-1-4244-2802-1

Type

conf

DOI

10.1109/APMC.2009.5384372

Filename

5384372