Title :
Bias dependence of RF power characteristics of 4H-SiC MESFETs
Author :
Moore, K. ; Weitzel, C. ; Nordquist, K. ; Pond, L., III ; Palmour, J. ; Allen, S. ; Carter, C., Jr.
Author_Institution :
Motorola Phoenix Corp. Res. Labs., Tempe, AZ, USA
Abstract :
4H-SiC MESFETs have been fabricated, packaged, and RF power tested under a wide range of bias conditions, ranging from Class A to Class B gate bias, and from 10 V to 50 V drain bias. Peak device performance included output power of 30.2 dBm (3.1 W/mm) at the 3 dB compression point and 38.9% power added efficiency in Class A operation, and 65.7% power added efficiency with 28.8 dBm (2.27 W/mm) maximum output power under Class B conditions. We believe this to be both the highest power density and the highest power added efficiency reported for a SiC MESFET
Keywords :
characteristics measurement; microwave field effect transistors; microwave measurement; microwave power transistors; power MESFET; power field effect transistors; semiconductor device testing; silicon compounds; wide band gap semiconductors; 10 to 50 V; 38.9 percent; 65.7 percent; Class A gate bias; Class B gate bias; MESFETs; RF power characteristics; RF power test; SiC; bias conditions; compression point; drain bias; microwave FETs; output power; peak device performance; power added efficiency; power density; Conducting materials; Etching; MESFETs; Packaging; Power generation; Power measurement; Radio frequency; Silicon carbide; Testing; Thermal conductivity;
Conference_Titel :
High Speed Semiconductor Devices and Circuits, 1995. Proceedings., IEEE/Cornell Conference on Advanced Concepts in
Conference_Location :
Ithaca, NY
Print_ISBN :
0-7803-3970-3
DOI :
10.1109/CORNEL.1995.482418
