Title :
Fabrication of silicon-on-insulator wafer by SIMOX layer transfer
Author :
Wei, Xing ; Zhang, Bo ; Chen, Meng ; Zhang, Miao ; Wang, Xi ; Lin, Chenglu
Author_Institution :
State Key Lab. of Functional Mater. for Inf., Chinese Acad. of Sci., Shanghai
Abstract :
In summary, an improved process named SIMOX layer transfer is proposed. SOI wafer with the device layer thickness of 147.5plusmn3.1 nm has been fabricated with SLT process. SE result indicates that the device layer has excellent thickness uniformity. The results of TEM show sharp interfaces and defect-free device layer, revealing the perfect structure of SLT SOI.
Keywords :
SIMOX; annealing; elemental semiconductors; silicon; transmission electron microscopy; wafer bonding; SIMOX layer transfer; SLT; SLT process; SOI wafer; Si; TEM; annealing; defect-free device layer; silicon-on-insulator wafer; wafer bonding; Annealing; Conference proceedings; Costs; Etching; Fabrication; Informatics; Laboratories; Silicon on insulator technology; Surface morphology; Wafer bonding;
Conference_Titel :
SOI Conference, 2008. SOI. IEEE International
Conference_Location :
New Paltz, NY
Print_ISBN :
978-1-4244-1954-8
Electronic_ISBN :
1078-621X
DOI :
10.1109/SOI.2008.4656304
