• DocumentCode
    3167553
  • Title

    Optical sensor using a floating body SOI MOSFET in the delta-sigma loop

  • Author

    Harik, Louis ; Kayal, Maher ; Sallese, Jean-Michel

  • Author_Institution
    Ecole Polytech. Fed. de Lausanne, Lausanne
  • fYear
    2008
  • fDate
    6-9 Oct. 2008
  • Firstpage
    91
  • Lastpage
    92
  • Abstract
    In this paper, the partially depleted SOI phototransistor has been used as a light intensity sensor. A pixel implementing the technique elaborated by L. Harik et al was designed and implemented on SOI technology. The circuit implements a first order Delta-sigma modulator. Measured data show flux densities as low as 3mW/m2 and an SNR of 60 dB.
  • Keywords
    MOSFET; delta-sigma modulation; optical sensors; phototransistors; silicon-on-insulator; Si; delta-sigma loop; delta-sigma modulator; floating body SOI MOSFET; light intensity sensor; optical sensor; phototransistor; CMOS image sensors; Charge pumps; Delta modulation; MOSFET circuits; Optical sensors; Photoconductivity; Phototransistors; Pulse width modulation; Sampling methods; Silicon on insulator technology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference, 2008. SOI. IEEE International
  • Conference_Location
    New Paltz, NY
  • ISSN
    1078-621X
  • Print_ISBN
    978-1-4244-1954-8
  • Electronic_ISBN
    1078-621X
  • Type

    conf

  • DOI
    10.1109/SOI.2008.4656309
  • Filename
    4656309
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3167553