Title :
Optical sensor using a floating body SOI MOSFET in the delta-sigma loop
Author :
Harik, Louis ; Kayal, Maher ; Sallese, Jean-Michel
Author_Institution :
Ecole Polytech. Fed. de Lausanne, Lausanne
Abstract :
In this paper, the partially depleted SOI phototransistor has been used as a light intensity sensor. A pixel implementing the technique elaborated by L. Harik et al was designed and implemented on SOI technology. The circuit implements a first order Delta-sigma modulator. Measured data show flux densities as low as 3mW/m2 and an SNR of 60 dB.
Keywords :
MOSFET; delta-sigma modulation; optical sensors; phototransistors; silicon-on-insulator; Si; delta-sigma loop; delta-sigma modulator; floating body SOI MOSFET; light intensity sensor; optical sensor; phototransistor; CMOS image sensors; Charge pumps; Delta modulation; MOSFET circuits; Optical sensors; Photoconductivity; Phototransistors; Pulse width modulation; Sampling methods; Silicon on insulator technology;
Conference_Titel :
SOI Conference, 2008. SOI. IEEE International
Conference_Location :
New Paltz, NY
Print_ISBN :
978-1-4244-1954-8
Electronic_ISBN :
1078-621X
DOI :
10.1109/SOI.2008.4656309
