• DocumentCode
    3167598
  • Title

    Monte Carlo simulation of the fundamental photodetector response on sub-picosecond time scales

  • Author

    Bair, J.E. ; Krusius, J.P.

  • Author_Institution
    Sch. of Appl. & Eng. Phys., Cornell Univ., Ithaca, NY, USA
  • fYear
    1995
  • fDate
    7-9 Aug 1995
  • Firstpage
    93
  • Lastpage
    102
  • Abstract
    The fundamental response of transit time photodetectors with picosecond response times has been analyzed through Monte Carlo simulation of MSM photodiodes. The fundamental response was found to consist of three components: a fast initial peak due to velocity overshoot in the Γ valley electrons, a slow secondary steady state electron response, and a slow steady state hole response. The relative magnitude of the two electron responses was found to be extremely sensitive to the device length, the electric field, and the energy of the exciting photons, such that, for a given device length and photon energy there is an optimal electric field for which the electron transit time is minimized. The hole transit time was observed to decrease monotonically with increasing electric field, thus making it difficult to optimize the electron and hole responses simultaneously. Accounting for the hole response was found to increase the magnitude of the optimal field. The detector response was also observed to degrade significantly as the energy of the exciting photons was increased
  • Keywords
    Monte Carlo methods; high-speed optical techniques; photodetectors; photodiodes; semiconductor device models; transit time devices; Γ valley; MSM photodiode; Monte Carlo simulation; device length; electric field; electron response; fundamental response; hole response; sub-picosecond time scale; transit time photodetector; velocity overshoot; Charge carrier processes; Delay; Detectors; Electrons; Optical scattering; Optical sensors; Photodetectors; Physics; Steady-state; Time factors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    High Speed Semiconductor Devices and Circuits, 1995. Proceedings., IEEE/Cornell Conference on Advanced Concepts in
  • Conference_Location
    Ithaca, NY
  • ISSN
    1079-4700
  • Print_ISBN
    0-7803-3970-3
  • Type

    conf

  • DOI
    10.1109/CORNEL.1995.482424
  • Filename
    482424