Title :
A High-Performance 14.4 to 19.7 GHz Power Detector Fabricated with Flip-Chip Technology
Author_Institution :
Endwave Corp.
Abstract :
A rugged flip-chip technology with potential for low cost at high manufacturing volume was employed to fabricate a power detector using mixed device technologies. The circuit consists of one discrete GaAs pHEMT chip and one GaAs dual-Schottky-diode chip flip-attached to a 3.5 mm by 2.1 mm substrate containing only passive circuitry. The power detector offers two different modes of operation to enable compensation for drift of the detector diode response over temperature
Keywords :
HEMT integrated circuits; III-V semiconductors; Schottky diodes; detector circuits; flip-chip devices; gallium arsenide; integrated circuit packaging; microwave integrated circuits; 14.4 to 19.7 GHz; 2.1 mm; 3.5 mm; GaAs; GaAs dual-Schottky-diode chip; GaAs pHEMT chip; flip-chip technology; mixed device technologies; power detector; Detectors; Electromagnetic heating; Integrated circuit technology; MODFET circuits; Microwave devices; Microwave technology; PHEMTs; Semiconductor diodes; Substrates; Switches; Flip-chip devices; MODFETs; Schottky diodes; microwave detectors; microwave integrated circuits; passive circuits;
Conference_Titel :
Microwave Conference, 2006. 36th European
Conference_Location :
Manchester
Print_ISBN :
2-9600551-6-0
DOI :
10.1109/EUMC.2006.281411
