Title :
Optimization of 3D-SMODFETs on GaAs and InP substrates with a simple analytical model
Author :
Martin, Glenn H. ; Seaford, Matthew L. ; Spencer, Robert ; Braunstein, Juürgen ; Eastman, Lester F.
Author_Institution :
Sch. of Electr. Eng., Cornell Univ., Ithaca, NY, USA
Abstract :
Using a simple analytical method followed by a computer program that solves the detailed quantum-mechanics, it is possible to design the optimum material structures for pseudomorphic MODFETs with full channels. Using a MODFET with a pseudomorphic graded channel, and atomic planar doped pseudomorphic barriers on both sides of the channel, it is possible to achieve record-breaking electron sheet densities in the channel without having carriers in the barrier (Double-Doped Double-Strained MODFET, 3D-SMODFET). This theory is used to predicted the optimum material designs (quantum-mechanical solution) for GaAs, InP and GaN based structures
Keywords :
III-V semiconductors; gallium arsenide; high electron mobility transistors; indium compounds; optimisation; semiconductor device models; 3D-SMODFET; GaAs; GaN; InP; analytical model; atomic planar doped pseudomorphic barriers; computer program; double-doped double-strained MODFET; electron sheet densities; optimization; pseudomorphic graded channel; quantum mechanics; Analytical models; Gallium arsenide; HEMTs; Impurities; Indium phosphide; Lattices; MODFETs; Photonic band gap; Sheet materials; Substrates;
Conference_Titel :
High Speed Semiconductor Devices and Circuits, 1995. Proceedings., IEEE/Cornell Conference on Advanced Concepts in
Conference_Location :
Ithaca, NY
Print_ISBN :
0-7803-3970-3
DOI :
10.1109/CORNEL.1995.482428
