DocumentCode :
3167686
Title :
Enhancing SOI with thin film diamond
Author :
Chandler, Gerry ; Zimmer, Jerry
Author_Institution :
sp3 Diamond Technol., Santa Clara, CA
fYear :
2008
fDate :
6-9 Oct. 2008
Firstpage :
101
Lastpage :
102
Abstract :
In the continuing thrust to extend Moorepsilas law, silicon is beginning to confront several issues that require innovative materials solutions to increase transistor and interconnect speeds while dealing with the increasing thermal loads of advanced microprocessors. The unsurpassed thermal, electrical and mechanical properties of diamond can be used to solve some of the thermal issues and enhance the performance characteristics of silicon based circuits. This paper focuses on the integration of diamond with SOI technology for the manufacture of silicon on diamond (SOD) wafers. The primary use for this technology is for thermal control but other niche markets may exist where the mechanical characteristics of diamond can also benefit MEMS devices made on SOI type substrates.
Keywords :
diamond; elemental semiconductors; integrated circuit interconnections; microcomputers; micromechanical devices; semiconductor thin films; silicon-on-insulator; thermal conductivity; C; MEMS devices; Moore law; SOD wafers; SOI technology; Si-C; diamond film; electrical properties; integrated circuit interconnections; mechanical properties; microprocessors; semiconductor transistor; silicon on diamond wafers; thermal conductivity; Integrated circuit interconnections; Mechanical factors; Microelectromechanical devices; Microprocessors; Moore´s Law; Pulp manufacturing; Silicon; Substrates; Thermal loading; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
SOI Conference, 2008. SOI. IEEE International
Conference_Location :
New Paltz, NY
ISSN :
1078-621X
Print_ISBN :
978-1-4244-1954-8
Electronic_ISBN :
1078-621X
Type :
conf
DOI :
10.1109/SOI.2008.4656314
Filename :
4656314
Link To Document :
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