DocumentCode
3167686
Title
Enhancing SOI with thin film diamond
Author
Chandler, Gerry ; Zimmer, Jerry
Author_Institution
sp3 Diamond Technol., Santa Clara, CA
fYear
2008
fDate
6-9 Oct. 2008
Firstpage
101
Lastpage
102
Abstract
In the continuing thrust to extend Moorepsilas law, silicon is beginning to confront several issues that require innovative materials solutions to increase transistor and interconnect speeds while dealing with the increasing thermal loads of advanced microprocessors. The unsurpassed thermal, electrical and mechanical properties of diamond can be used to solve some of the thermal issues and enhance the performance characteristics of silicon based circuits. This paper focuses on the integration of diamond with SOI technology for the manufacture of silicon on diamond (SOD) wafers. The primary use for this technology is for thermal control but other niche markets may exist where the mechanical characteristics of diamond can also benefit MEMS devices made on SOI type substrates.
Keywords
diamond; elemental semiconductors; integrated circuit interconnections; microcomputers; micromechanical devices; semiconductor thin films; silicon-on-insulator; thermal conductivity; C; MEMS devices; Moore law; SOD wafers; SOI technology; Si-C; diamond film; electrical properties; integrated circuit interconnections; mechanical properties; microprocessors; semiconductor transistor; silicon on diamond wafers; thermal conductivity; Integrated circuit interconnections; Mechanical factors; Microelectromechanical devices; Microprocessors; Moore´s Law; Pulp manufacturing; Silicon; Substrates; Thermal loading; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
SOI Conference, 2008. SOI. IEEE International
Conference_Location
New Paltz, NY
ISSN
1078-621X
Print_ISBN
978-1-4244-1954-8
Electronic_ISBN
1078-621X
Type
conf
DOI
10.1109/SOI.2008.4656314
Filename
4656314
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