High-Temperature Operation of Diamond Junction Field-Effect Transistors With Lateral p-n Junctions

Author

Iwasaki, Takuya ; Hoshino, Yuichi ; Tsuzuki, Ken ; Kato, Haruhisa ; Makino, Tatsuya ; Ogura, M. ; Takeuchi, D. ; Okushi, H. ; Yamasaki, Shintaro ; Hatano, M.

Author_Institution

Dept. of Phys. Electron., Tokyo Inst. of Technol., Tokyo, Japan

Volume

34

Issue

9

fYear

2013

fDate

Sept. 2013

Firstpage

1175

Lastpage

1177

Abstract

High-temperature performance of diamond junction field-effect transistors (JFETs) with lateral p-n junctions is demonstrated. Diamond JFETs fabricated by n-type selective growth can be operated at 723 K, and show very low leakage currents of ~ 10^-13 A and high ON/OFF ratios . Specific on-resistance decreases from 52.2 mΩ·cm² at 300 K to 1.4 mΩ·cm² at 723 K. At high temperatures, the device shows steep subthreshold swings very close to the theoretical limit. The low leakage currents are maintained even at a high drain voltage of -100 V. These excellent properties at high temperatures and high voltage show that diamond JFETs can work in harsh environments.

Keywords

junction gate field effect transistors; p-n junctions; JFET; diamond junction field-effect transistors; lateral p-n junctions; Diamonds; JFETs; Leakage currents; Logic gates; P-n junctions; Temperature measurement; Diamond; high-temperature operation; junction field-effect transistors (JFETs); low leakage current; low specific on-resistance;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2013.2271377

Filename

6557019