Mixed-signal micro-systems in emerging SOI technologies

Silicon-on-insulator (SOI) technologies have recently attracted interest in the development of next-generation high-performance micro-systems. The absence of latch-up, the reduced parasitic capacitance, the circuit isolation and multi-threshold devices are just a few of the advantages of this technology. This article introduces a flavor of SOI called silicon-on-sapphire (SOS), describing the fabrication process, the advantages for innovative low-power, low-voltage, high-speed microsystem design. We present the design and development of several advanced SOS micro-systems, such as: analog-to-digital converters, monolithic digital isolation buffers, image sensor arrays, low-voltage and low-current detectors, and communication systems.