• DocumentCode
    3167967
  • Title

    Optimizing FinFET geometry and parasitics for RF applications

  • Author

    Kranti, Abhinav ; Raskin, Jean-Pierre ; Armstrong, G. Alastair

  • Author_Institution
    Northern Ireland Semicond. Res. Centre (NISRC), Queen´´s Univ. Belfast, Belfast
  • fYear
    2008
  • fDate
    6-9 Oct. 2008
  • Firstpage
    123
  • Lastpage
    124
  • Abstract
    A detailed analysis about the impact of parasitic capacitances/resistances and fin geometry in FinFETs for RF applications has been presented. RF FinFETs should be designed with Tfin/Lg of 0.6 and AR of 3, along with minimal fin spacing of 50 nm to achieve higher fT and fMAX values. Although FinFET will always exhibit higher parasitics than an equivalent planar technology, reduction of RSD to ITRS target specification, together with a minimal fin spacing Sfin, results in significant improvement in RF figures of merit.
  • Keywords
    MOSFET; capacitance; millimetre wave field effect transistors; FinFET geometry optimization; RF application; parasitic capacitance; parasitic resistance; Application software; Computational geometry; Computer science; Conference proceedings; Controllability; FinFETs; Laboratories; Microwave devices; Parasitic capacitance; Radio frequency;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference, 2008. SOI. IEEE International
  • Conference_Location
    New Paltz, NY
  • ISSN
    1078-621X
  • Print_ISBN
    978-1-4244-1954-8
  • Electronic_ISBN
    1078-621X
  • Type

    conf

  • DOI
    10.1109/SOI.2008.4656325
  • Filename
    4656325
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3167967