Title :
Double thick copper BEOL in advanced HR SOI RF CMOS technology: Integration of high performance inductors for RF front end module
Author :
Pastore, C. ; Gianesello, F. ; Gloria, D. ; Serret, E. ; Bouillon, P. ; Rauber, B. ; Benech, Ph.
Author_Institution :
STMicroelectron., Crolles
Abstract :
This paper presents high-Q and high current on-chip inductors integrated in a six copper metal level radio frequency (RF) back end of line (BEOL), including two 3 mum thick top metallizations, in an advanced high resistivity (HR) SOI CMOS technology. Inductors achieved on HR SOI CMOS technology using this optimized RF BEOL are reported, compared with standard BEOL, and firstly benchmarked with current ones fabricated in dedicated passive component technologies (integrated passive device (IPD) on glass or RF substrates). According to measurement results, reported SOI inductors offer quality factor Q greater than 30 and current capability up to 57 mA/mum @ 125 degC, performances largely comparable to those obtained in IPD technologies, and required for RF front-end module design.
Keywords :
CMOS integrated circuits; Q-factor; copper; field effect MMIC; inductors; integrated circuit interconnections; integrated circuit metallisation; silicon-on-insulator; Si-SiO2; copper metal level radio frequency back end-of-line; double thick copper BEOL; frequency 4.5 GHz; high resistivity SOI RF CMOS technology; high-Q inductors; high-current on-chip inductors; quality factor; size 3 mum; thick top metallization; CMOS technology; Conductivity; Copper; Current measurement; Glass; Inductors; Metallization; Q factor; Q measurement; Radio frequency;
Conference_Titel :
SOI Conference, 2008. SOI. IEEE International
Conference_Location :
New Paltz, NY
Print_ISBN :
978-1-4244-1954-8
Electronic_ISBN :
1078-621X
DOI :
10.1109/SOI.2008.4656332
