Double thick copper BEOL in advanced HR SOI RF CMOS technology: Integration of high performance inductors for RF front end module

Author

Pastore, C. ; Gianesello, F. ; Gloria, D. ; Serret, E. ; Bouillon, P. ; Rauber, B. ; Benech, Ph.

Author_Institution

STMicroelectron., Crolles

fYear

2008

fDate

6-9 Oct. 2008

Firstpage

137

Lastpage

138

Abstract

This paper presents high-Q and high current on-chip inductors integrated in a six copper metal level radio frequency (RF) back end of line (BEOL), including two 3 mum thick top metallizations, in an advanced high resistivity (HR) SOI CMOS technology. Inductors achieved on HR SOI CMOS technology using this optimized RF BEOL are reported, compared with standard BEOL, and firstly benchmarked with current ones fabricated in dedicated passive component technologies (integrated passive device (IPD) on glass or RF substrates). According to measurement results, reported SOI inductors offer quality factor Q greater than 30 and current capability up to 57 mA/mum @ 125 degC, performances largely comparable to those obtained in IPD technologies, and required for RF front-end module design.

Keywords

CMOS integrated circuits; Q-factor; copper; field effect MMIC; inductors; integrated circuit interconnections; integrated circuit metallisation; silicon-on-insulator; Si-SiO₂; copper metal level radio frequency back end-of-line; double thick copper BEOL; frequency 4.5 GHz; high resistivity SOI RF CMOS technology; high-Q inductors; high-current on-chip inductors; quality factor; size 3 mum; thick top metallization; CMOS technology; Conductivity; Copper; Current measurement; Glass; Inductors; Metallization; Q factor; Q measurement; Radio frequency;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 2008. SOI. IEEE International

Conference_Location

New Paltz, NY

ISSN

1078-621X

Print_ISBN

978-1-4244-1954-8

Electronic_ISBN

1078-621X

Type

conf

DOI

10.1109/SOI.2008.4656332

Filename

4656332