Title :
Finishing of silicon film for silicon-on-glass
Author_Institution :
Corning, Inc., Corning, NY, USA
Abstract :
Surface smoothing and removal of the damaged portion of as-transferred single crystalline silicon films is described. The process includes sacrificial plasma oxidation and wet stripping of the oxide. Typically, the topmost 20 nm of silicon film is removed in one cycle. Rougness of the film surface significantly improves upon the plasma/strip cycle. The process can be used for either SOI or silicon-on-glass (SiOG) finishing. As conventional CMP is not feasible for SiOG finishing, the described process has a unique advantage for finishing SiOG.
Keywords :
chemical mechanical polishing; elemental semiconductors; oxidation; semiconductor thin films; silicon; silicon-on-insulator; surface finishing; surface roughness; CMP; SOI; Si; Si-SiO2; SiOG finishing; as-transferred single crystalline silicon films; damaged portion; film surface roughness; plasma/strip cycle; sacrificial plasma oxidation; silicon-on-glass; silicon-on-glass finishing; surface smoothing; wet stripping; Films; Finishing; Oxidation; Plasmas; Silicon; Strips; Substrates;
Conference_Titel :
SOI Conference (SOI), 2010 IEEE International
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4244-9130-8
Electronic_ISBN :
1078-621x
DOI :
10.1109/SOI.2010.5641053
