DocumentCode :
3168166
Title :
Session #9 Device characterization, reliability, and modeling
Author :
Trivedi, Vishal ; Ida, Jiro
Author_Institution :
Freescale, USA
fYear :
2008
fDate :
6-9 Oct. 2008
Firstpage :
141
Lastpage :
142
Keywords :
High K dielectric materials; High-K gate dielectrics; Immune system; MOSFET circuits; Passivation; Research and development; Semiconductor device modeling; Semiconductor diodes; Stress; Thyristors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
SOI Conference, 2008. SOI. IEEE International
Conference_Location :
New Paltz, NY
ISSN :
1078-621X
Print_ISBN :
978-1-4244-1954-8
Electronic_ISBN :
1078-621X
Type :
conf
DOI :
10.1109/SOI.2008.4656334
Filename :
4656334
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3168166
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