DocumentCode
3168193
Title
Double-well field effect diode vs. SCR behavior under CDM stress in 45nm SOI technology
Author
Salman, Adnan Ahmed ; Cao, Shuqing ; Beebe, Stephen G. ; Pelella, Mario M. ; Dutton, Robert W.
Author_Institution
Adv. Micro Devices, Sunnyvale, CA
fYear
2008
fDate
6-9 Oct. 2008
Firstpage
143
Lastpage
144
Abstract
In this paper, we present a comparison of the turn-on voltage between SOI-SCR, and the novel DWFED structure. We show that DWFED can achieve faster turn-on, protecting the low voltage devices more effectively. Using the pulse waveforms, we justify the use of a gate trigger circuit for the DWFED to reduce the transient spikes under faster CDM pulses.
Keywords
electrostatic discharge; field effect devices; semiconductor device models; silicon-on-insulator; thyristors; trigger circuits; DWFED structure; SCR behavior; SOI technology; Si; charged device model stress; double-well field effect diode; electrostatic discharge; gate trigger circuit; pulse waveforms; silicon controlled rectifier; Conference proceedings; Decision support systems; Diodes; Quadratic programming; Stress; Thyristors;
fLanguage
English
Publisher
ieee
Conference_Titel
SOI Conference, 2008. SOI. IEEE International
Conference_Location
New Paltz, NY
ISSN
1078-621X
Print_ISBN
978-1-4244-1954-8
Electronic_ISBN
1078-621X
Type
conf
DOI
10.1109/SOI.2008.4656335
Filename
4656335
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