Title :
Double-well field effect diode vs. SCR behavior under CDM stress in 45nm SOI technology
Author :
Salman, Adnan Ahmed ; Cao, Shuqing ; Beebe, Stephen G. ; Pelella, Mario M. ; Dutton, Robert W.
Author_Institution :
Adv. Micro Devices, Sunnyvale, CA
Abstract :
In this paper, we present a comparison of the turn-on voltage between SOI-SCR, and the novel DWFED structure. We show that DWFED can achieve faster turn-on, protecting the low voltage devices more effectively. Using the pulse waveforms, we justify the use of a gate trigger circuit for the DWFED to reduce the transient spikes under faster CDM pulses.
Keywords :
electrostatic discharge; field effect devices; semiconductor device models; silicon-on-insulator; thyristors; trigger circuits; DWFED structure; SCR behavior; SOI technology; Si; charged device model stress; double-well field effect diode; electrostatic discharge; gate trigger circuit; pulse waveforms; silicon controlled rectifier; Conference proceedings; Decision support systems; Diodes; Quadratic programming; Stress; Thyristors;
Conference_Titel :
SOI Conference, 2008. SOI. IEEE International
Conference_Location :
New Paltz, NY
Print_ISBN :
978-1-4244-1954-8
Electronic_ISBN :
1078-621X
DOI :
10.1109/SOI.2008.4656335
