High-k/metal Gate GeOI pMOSFET: Validation of the Lim&Fossum model for interface trap density extraction

Author

Romanjek, K. ; Royer, C. Le ; Pouydebasque, A. ; Augendre, E. ; Vinet, M. ; Tabone, C. ; Sanchez, L. ; Hartmann, J.-M. ; Grampeix, H. ; Mazzocchi, V. ; Clavelier, L. ; Garros, X. ; Reimbold, G. ; Naval, N. ; Boulanger, F. ; Deleonibus, S.

Author_Institution

CEA-LETI/MINATEC, Grenoble

fYear

2008

fDate

6-9 Oct. 2008

Firstpage

147

Lastpage

148

Abstract

The extraction of the trap density on Ge/gate-stack (top) and Ge/BOX (bottom) interfaces of germanium-on-insulator pMOSFETs is shown using the Lim & Fossum model historically developed for fully depleted SOI devices. The doping and the thickness of the Ge film do not change significantly the top interface trap density. The bottom one is slightly raised by doping the Ge film. This method can be used as a simple and efficient meaning of the interface trap density levels monitoring during process optimization of GeOI devices.

Keywords

MOSFET; doping; elemental semiconductors; germanium; high-k dielectric thin films; interface states; optimisation; semiconductor device models; semiconductor thin films; Ge; Lim-Fossum model; SOI devices; doping; high-k-metal gate germanium-on-insulator pMOSFET; interface trap density; optimization; thin film; Conference proceedings; Decision support systems; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Hydrogen; MOSFET circuits; Quadratic programming; Semiconductor films; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 2008. SOI. IEEE International

Conference_Location

New Paltz, NY

ISSN

1078-621X

Print_ISBN

978-1-4244-1954-8

Electronic_ISBN

1078-621X

Type

conf

DOI

10.1109/SOI.2008.4656337

Filename

4656337