Title :
Total-ionizing-dose radiation response of partially-depleted SOI devices
Author :
Rezzak, Nadia ; Zhang, En Xia ; Alles, Michael L. ; Schrimpf, Ronald D. ; Hughes, Harold
Author_Institution :
Vanderbilt Univ., VU, Nashville, TN, USA
Abstract :
The high body doping inherent in sub-100 nm partially-depleted SOI devices tends to mitigate the sensitivity to TID-induced leakage, providing that the doping reaches the STI sidewalls and back channel. Measured TID response on 45 nm NMOS SOI is consistent with trends observed in simulations.
Keywords :
MOS integrated circuits; silicon-on-insulator; NMOS SOI; STI sidewalls; TID-induced leakage; back channel; high body doping; partially-depleted SOI devices; total-ionizing-dose radiation response; Doping profiles; MOS devices; Semiconductor device modeling; Semiconductor process modeling; Silicon; Silicon on insulator technology;
Conference_Titel :
SOI Conference (SOI), 2010 IEEE International
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4244-9130-8
Electronic_ISBN :
1078-621x
DOI :
10.1109/SOI.2010.5641057
