Title :
A nonlinear body resistance model for accurate PD/SOI technology characterization
Author :
Wu, W. ; Li, X. ; Gildenblat, G. ; Workman, G.O. ; Veeraraghavan, S. ; Watts, J.
Author_Institution :
Dept. of Electr. Eng., Arizona State Univ., Tempe, AZ
Abstract :
We report a bias-dependent, nonlinear body resistance model suitable for accurate characterization of PD/SOI technology. This model is implemented in the surface potential based SOI MOSFET compact model PSP-SOI and experimentally verified for 65 nm PD/SOI technology node.
Keywords :
MOSFET; silicon-on-insulator; surface potential; SOI MOSFET compact model; bias-dependent body resistance model; nonlinear body resistance model; partially depleted-SOI technology characterization; surface potential; Body regions; Electric resistance; Immune system; MOSFET circuits; Semiconductor films; Semiconductor process modeling; Silicon; Surface resistance; Threshold voltage; USA Councils;
Conference_Titel :
SOI Conference, 2008. SOI. IEEE International
Conference_Location :
New Paltz, NY
Print_ISBN :
978-1-4244-1954-8
Electronic_ISBN :
1078-621X
DOI :
10.1109/SOI.2008.4656339
