Title :
Hole velocity enhancement in sub-100 nm gate length strained-SiGe channel p-MOSFETs on insulator
Author :
Gomez, L. ; Hashemi, P. ; Hoyt, J.L.
Author_Institution :
Microsyst. Technol. Labs., Massachusetts Inst. of Technol., Cambridge, MA
Abstract :
Hole effective mobility and velocity have been extracted from measurements of sub-100 nm gate length strained Si0.45Ge0.55 channel MOSFETs. The hole effective mobility is observed to provide a 2.4x enhancement over Si hole universal mobility for channel lengths in the range of 200 to 80 nm. The extracted virtual source velocity is enhanced by 45% relative to Si control devices. These results are promising for future high-Ge content SiGe-channel p-MOSFETs.
Keywords :
Ge-Si alloys; MOSFET; hole mobility; scanning electron microscopy; semiconductor materials; SEM; SiGe; hole effective mobility; hole velocity; silicon channel devices; strained-SiGe channel p-MOSFET; Capacitive sensors; Conference proceedings; Effective mass; Germanium silicon alloys; Insulation; Laboratories; MOSFET circuits; Scattering; Silicon germanium; Silicon on insulator technology;
Conference_Titel :
SOI Conference, 2008. SOI. IEEE International
Conference_Location :
New Paltz, NY
Print_ISBN :
978-1-4244-1954-8
Electronic_ISBN :
1078-621X
DOI :
10.1109/SOI.2008.4656345
