• DocumentCode
    3168404
  • Title

    Hole velocity enhancement in sub-100 nm gate length strained-SiGe channel p-MOSFETs on insulator

  • Author

    Gomez, L. ; Hashemi, P. ; Hoyt, J.L.

  • Author_Institution
    Microsyst. Technol. Labs., Massachusetts Inst. of Technol., Cambridge, MA
  • fYear
    2008
  • fDate
    6-9 Oct. 2008
  • Firstpage
    163
  • Lastpage
    164
  • Abstract
    Hole effective mobility and velocity have been extracted from measurements of sub-100 nm gate length strained Si0.45Ge0.55 channel MOSFETs. The hole effective mobility is observed to provide a 2.4x enhancement over Si hole universal mobility for channel lengths in the range of 200 to 80 nm. The extracted virtual source velocity is enhanced by 45% relative to Si control devices. These results are promising for future high-Ge content SiGe-channel p-MOSFETs.
  • Keywords
    Ge-Si alloys; MOSFET; hole mobility; scanning electron microscopy; semiconductor materials; SEM; SiGe; hole effective mobility; hole velocity; silicon channel devices; strained-SiGe channel p-MOSFET; Capacitive sensors; Conference proceedings; Effective mass; Germanium silicon alloys; Insulation; Laboratories; MOSFET circuits; Scattering; Silicon germanium; Silicon on insulator technology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference, 2008. SOI. IEEE International
  • Conference_Location
    New Paltz, NY
  • ISSN
    1078-621X
  • Print_ISBN
    978-1-4244-1954-8
  • Electronic_ISBN
    1078-621X
  • Type

    conf

  • DOI
    10.1109/SOI.2008.4656345
  • Filename
    4656345
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3168404