Title :
SRAM cells for low-power write in buffer memories
Author :
Alowersson, J. ; Andersson, P.
Author_Institution :
Dept. of Comput. Eng., Lund Univ., Sweden
Abstract :
We present a novel approach to SRAM cell operation for low-power write. Instead of providing read stability by using much stronger inverter than access transistors, we do so by using a lower word-line voltage during read. Thus, the cell can be written to with low bit-line voltage swing, thereby significantly reducing the energy required to write.
Keywords :
SRAM chips; buffer storage; SRAM cells; bit-line voltage swing; buffer memories; low-power write; read stability; word-line voltage; Buffer storage; Inverters; Power engineering computing; Pulse amplifiers; Random access memory; Read-write memory; Stability; Telecommunications; Throughput; Voltage;
Conference_Titel :
Low Power Electronics, 1995., IEEE Symposium on
Conference_Location :
San Jose, CA, USA
Print_ISBN :
0-7803-3036-6
DOI :
10.1109/LPE.1995.482464
