A 1 V Switched-Capacitor /spl Sigma//spl Delta/ modulator

Author

Bazarjani, S.S. ; Snelgrove, M. ; MacElwee, T.

Author_Institution

Dept. of Electron., Carleton Univ., Ottawa, Ont., Canada

fYear

1995

fDate

9-11 Oct. 1995

Firstpage

70

Lastpage

71

Abstract

This paper describes a 1 V first order Switched-Capacitor (SC) /spl Sigma//spl Delta/ modulator implemented in a 0.5 /spl mu/m n+/p+ dual poly gate CMOS process using natural threshold voltage MOSFETs. The natural transistors in this process have threshold voltages of about 180 mV (nMOSFETs) and 200 mV (pMOSFETs) which is suitable for 1 V circuits. Modification to the process is minimal and involves the removal of the threshold adjust implant step. This modulator operates at 1 V and has 54 dB dynamic range for an oversampling ratio of 128 (sampling frequency 1 MHz and signal frequency 4 KHz) and consumes about 100 /spl mu/W.

Keywords

CMOS integrated circuits; sigma-delta modulation; switched capacitor networks; 0.5 micron; 1 V; 100 muW; MOSFETs; dynamic range; low voltage circuit; n+/p+ dual poly gate CMOS process; natural transistors; oversampling ratio; switched-capacitor /spl Sigma//spl Delta/ modulator; threshold voltages; CMOS process; CMOS technology; Circuits; Delta modulation; Dynamic range; Implants; Low voltage; MOSFETs; Telecommunication switching; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Low Power Electronics, 1995., IEEE Symposium on

Conference_Location

San Jose, CA, USA

Print_ISBN

0-7803-3036-6

Type

conf

DOI

10.1109/LPE.1995.482468

Filename

482468