Title :
SOIAS: dynamically variable threshold SOI with active substrate
Author :
Vieri, C. ; Yang, I. ; Chandrakasan, A. ; Antoniadis, D.
Author_Institution :
MIT, Cambridge, MA, USA
Abstract :
This paper describes a low voltage, silicon on insulator, active substrate (SOIAS) technology which addresses the problems of increased leakage currents in high performance, low voltage circuits. The threshold voltage is dynamically variable through the application of a voltage to an insulated back gate for high performance and low leakage.
Keywords :
CMOS integrated circuits; circuit optimisation; integrated circuit design; leakage currents; silicon-on-insulator; SOI active substrate technology; SOIAS technology; dynamically variable threshold SOI; energy reduction; fully depleted CMOS; geometry optimization; high performance low voltage circuits; insulated back gate; leakage currents; threshold voltage; CMOS technology; Capacitance; Circuits; Leakage current; Low voltage; Semiconductor films; Silicon on insulator technology; Substrates; Switches; Threshold voltage;
Conference_Titel :
Low Power Electronics, 1995., IEEE Symposium on
Conference_Location :
San Jose, CA, USA
Print_ISBN :
0-7803-3036-6
DOI :
10.1109/LPE.1995.482475
