Trade-off in IGBT safe operating area and performance parameters

Author

Trivedi, Malay ; Shenai, Krishna

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Illinois Univ., Chicago, IL, USA

Volume

2

fYear

1997

fDate

5-9 Oct 1997

Firstpage

949

Abstract

The need for application-specific power semiconductor device design is stressed in this paper. It is shown that the choice of forward voltage switching time and safe operating area (SOA) of the device critically depend on the specific application. A response surface plotting the variation of V_CEont_OFF and SOA of the device with key device process parameters is required to facilitate optimized design. The trade-off between SOA and other performance parameters is illustrated in this paper with the help of a commercially available power IGBT

Keywords

bipolar transistor switches; insulated gate bipolar transistors; power bipolar transistors; power semiconductor switches; safety; application-specific power semiconductor device design; design optimisation; forward voltage switching time; performance parameters; power IGBT; response surface; safe operating area; Charge carrier lifetime; Cost function; Electronics industry; Insulated gate bipolar transistors; Response surface methodology; Semiconductor optical amplifiers; Silicon; Stress; Switching loss; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Industry Applications Conference, 1997. Thirty-Second IAS Annual Meeting, IAS '97., Conference Record of the 1997 IEEE

Conference_Location

New Orleans, LA

ISSN

0197-2618

Print_ISBN

0-7803-4067-1

Type

conf

DOI

10.1109/IAS.1997.628975

Filename

628975