Application advantages of high voltage high current IGBTs with punch through technology

Author

Donlon, John F. ; Motto, Eric R. ; Ishii, Kazufumi ; Iida, Tomoharu

Author_Institution

Powerex Inc., Youngwood, PA, USA

Volume

2

fYear

1997

fDate

5-9 Oct 1997

Firstpage

955

Abstract

New process technologies are extending the application range of IGBT modules. 2500 V and 3300 V/1200 A IGBTs have been developed using an optimized punch-through design that achieves a positive temperature coefficient of saturation voltage and rugged safe operating area of the nonpunch-through approach while retaining the low loss characteristics of punch-through technology. Special wafer processing, optimizing the collector p+ concentration and local lifetime control, is employed to achieve these characteristics. This paper discusses the adaptation of the punch-through design to achieve the desired device characteristics

Keywords

bipolar transistor switches; modules; power bipolar transistors; power semiconductor switches; semiconductor device manufacture; 1200 A; 2500 V; 3300 V; application advantages; collector p+ concentration; device characteristics; local lifetime control; low loss characteristics; positive temperature coefficient; power IGBTs; process technologies; punch through technology; punch-through design; rugged safe operating area; saturation voltage; wafer processing; Buffer layers; Charge carrier lifetime; Chip scale packaging; Design optimization; Electron beams; Insulated gate bipolar transistors; Power engineering and energy; Silicon; USA Councils; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Industry Applications Conference, 1997. Thirty-Second IAS Annual Meeting, IAS '97., Conference Record of the 1997 IEEE

Conference_Location

New Orleans, LA

ISSN

0197-2618

Print_ISBN

0-7803-4067-1

Type

conf

DOI

10.1109/IAS.1997.628976

Filename

628976