Title :
Switching characteristics of an asymmetrical complementary 4H-SiC gate turn-off (GTO) thyristor
Author :
Mookken, John ; Lewis, Robert ; Hudgins, Jerry L. ; Agarwal, A. ; Casady, J.B. ; Siergiej, S. ; Seshadri, S.
Author_Institution :
Dept. of Electr. & Comput. Eng., South Carolina Univ., Columbia, SC, USA
Abstract :
The switching characteristics of 4H-SiC asymmetric GTO thyristors are studied and compared to Si-based IGBTs, MCTs and MOSFETs. Forward current density, turn-off time and forward blocking voltage parameters are matched for the various switching devices. From the measurements, the necessary parameters were extracted to develop a simple PSPICE circuit model for the SiC GTO. The simulated response of the model is compared to the experimental response of the device
Keywords :
circuit analysis computing; power semiconductor switches; semiconductor device models; semiconductor device testing; silicon compounds; software packages; switching; thyristors; PSPICE circuit model; SiC; SiC asymmetric GTO thyristors; experimental response; forward blocking voltage parameters; forward current density; performance measurements; simulated response; switching characteristics; turn-off time; Anodes; Circuit testing; Current density; Epitaxial layers; Power system modeling; SPICE; Silicon carbide; Temperature; Thyristors; Voltage;
Conference_Titel :
Industry Applications Conference, 1997. Thirty-Second IAS Annual Meeting, IAS '97., Conference Record of the 1997 IEEE
Conference_Location :
New Orleans, LA
Print_ISBN :
0-7803-4067-1
DOI :
10.1109/IAS.1997.628983
