Title :
IGBT module rupture categorization and testing
Author :
Braun, D. ; Pixler, D. ; LeMay, P.
Author_Institution :
Rockwell Autom., Mequon, WI, USA
Abstract :
The IGBT module rupture phenomenon is characterized through testing and categorized into two separate ratings for each device investigated. A DC link inverter bus fuse is being implemented in most designs as a protective device to minimize extremely high overcurrent faults and power module rupture. The power semiconductor fuses available are optimized for lowest I2t let though energy, low forward drop and low insertion impedance. As a foundation of the establishment of selected IGBT module rupture ratings the paper contains the testing of several selected fuses and their I2t values under specific conditions of 600 volts DC applied to an inverter grade capacitor bank. The selected fuses are tested together with the IGBT being evaluated for its rupture ratings. The power circuit is by design a low loss, low inductance structure which will result in the delivery of extremely high currents and energy transmission. The IGBT rupture testing is presented into two categories of overcurrent failure and of unclamped voltage failure. The two failure modes result in different values of rupture energy and I2t. In conclusion the rupture testing is compared with appropriately sized semiconductor protecting fuses
Keywords :
electric fuses; electric impedance; electrical faults; inductance; insulated gate bipolar transistors; invertors; modules; overcurrent protection; semiconductor device testing; DC link inverter bus fuse; IGBT module rupture categorization; IGBT module rupture ratings; IGBT module rupture testing; energy transmission; inverter grade capacitor bank; low forward drop; low inductance structure; low insertion impedance; low loss; overcurrent failure; overcurrent faults minimisation; power module rupture minimisation; power semiconductor fuses; unclamped voltage failure; Capacitors; Circuit faults; Circuit testing; Fuses; Impedance; Insulated gate bipolar transistors; Inverters; Multichip modules; Propagation losses; Protection;
Conference_Titel :
Industry Applications Conference, 1997. Thirty-Second IAS Annual Meeting, IAS '97., Conference Record of the 1997 IEEE
Conference_Location :
New Orleans, LA
Print_ISBN :
0-7803-4067-1
DOI :
10.1109/IAS.1997.629021
