Title :
A relation between dynamic saturation characteristics and tail current of nonpunchthrough IGBTs. II. Effective switching loss estimation
Author :
Yamashita, J. ; Tamada, Tomoki ; Soejima, N. ; Ymaguchi, H. ; Haruguchi, H.
Author_Institution :
Power Device Div., Mitsubishi Electr. Corp., Fukuoka City, Japan
Abstract :
This paper describes an effective switching loss estimation of nonpunchthrough (NPT) IGBT, and a comparison of switching losses between 1200 V class NPT and punchthrough (PT) IGBT. VVVF inverter loss calculations of 1200 V NPT and PT-IGBT were carried out using the experimental data. The calculation result was reinforced by the numerical device simulation results. As a result, it is shown that switching loss and VVVF inverter loss of NPT-IGBT are larger than that of PT-IGBT for 1200 V class. Using above VVVF inverter loss results, thermal simulation for temperature rise of an IGBT module are demonstrated
Keywords :
insulated gate bipolar transistors; invertors; losses; semiconductor device testing; switching circuits; thermal analysis; 1200 V; VVVF inverter loss calculations; dynamic saturation characteristics; effective switching loss estimation; inverter loss; nonpunchthrough IGBT; tail current; temperature rise; thermal simulation; Epitaxial layers; Insulated gate bipolar transistors; Inverters; Numerical simulation; Power engineering and energy; Power generation; Switching loss; Tail; Temperature; Voltage;
Conference_Titel :
Industry Applications Conference, 1997. Thirty-Second IAS Annual Meeting, IAS '97., Conference Record of the 1997 IEEE
Conference_Location :
New Orleans, LA
Print_ISBN :
0-7803-4067-1
DOI :
10.1109/IAS.1997.629022
