DocumentCode :
3169666
Title :
Applications and synthesis of zinc oxide: An emerging wide bandgap material
Author :
Hussain, Babar ; Akhtar Raja, M. Yasin ; Na Lu ; Ferguson, Ian
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of North Carolina at Charlotte, Charlotte, NC, USA
fYear :
2013
fDate :
11-13 Dec. 2013
Firstpage :
88
Lastpage :
93
Abstract :
Zinc oxide, an important metal oxide, is a wide bandgap II-VI semiconductor material with large exciton binding energy of 60 meV at room temperature. Zinc oxide has some unique characteristics like large piezoelectric constant, stability at higher temperature, and suitability for a variety of nanostructures. It has potential applications in several optics and optoelectronics technologies including display panels, electroluminescent and photovoltaic devices, thermoelectric devices, and nanogenerators. We present a short review on synthesis of zinc oxide emphasizing on MOCVD which is the most popular method to grow ZnO. Few applications of zinc oxide have also been discussed very briefly. Previously reported significant results about MOCVD growth of zinc oxide are discussed in detail. Also, we have grown zinc oxide thin films with different thicknesses on sapphire substrates using MOCVD. It has been observed that crystal quality degrades with increase in thickness of the film due to lattice mismatch and growth rate substantially decreases with increase in chamber pressure.
Keywords :
III-V semiconductors; MOCVD; sapphire; thin films; wide band gap semiconductors; zinc compounds; II-VI semiconductor material; MOCVD growth; ZnO; crystal quality; display panels; electroluminescent device; electron volt energy 60 meV; exciton binding energ; higher temperature stability; lattice mismatch; metal oxide; nanogenerators; nanostructures; optoelectronics technology; photovoltaic device; piezoelectric constant; sapphire substrates; temperature 293 K to 298 K; thermoelectric device; wide bandgap material; zinc oxide thin films; Crystals; Films; MOCVD; Nanostructures; Substrates; Temperature; Zinc oxide; HEMT; MOCVD TFT; TCO; UV emitters; Zinc oxide; nanostructures;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
High Capacity Optical Networks and Enabling Technologies (HONET-CNS), 2013 10th International Conference on
Conference_Location :
Magosa
Print_ISBN :
978-1-4799-2568-1
Type :
conf
DOI :
10.1109/HONET.2013.6729763
Filename :
6729763
Link To Document :
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