Title :
High performance AlGaInP LEDs using reactive thermally evaporated transparent conducting indium-tin-oxide (ITO)
Author :
Aliyu, Y.H. ; Morgan, D.V. ; Thomas, H.
Author_Institution :
Div. of Electron., Univ. of Wales, Cardiff, UK
Abstract :
Reactive thermally evaporated transparent conducting Indium-Tin-Oxide (ITO) layers are used as window material and current spreading layer on AlGaInP Light Emitting Diodes (LEDs). The sheet resistance of the ITO films deposited is of the order 4.5 ohm/sq with up to 90% transmission in the visible region of the spectrum. Optimum thickness of the p and n-type AlGaInP cladding and the top p+GaAs epitaxial layers were determined. The LEDs fabricated emit light with a peak wavelength (λp) at 600 nm and Full Width at Half Maximum (FWHM) of 15 nm. A forward voltage of 1.71 V at 20 mA was obtained. In all cases the devices incorporating the ITO layer gave a marginally greater output (10%) than the standard non-ITO devices
Keywords :
III-V semiconductors; aluminium compounds; chemical vapour deposition; gallium arsenide; gallium compounds; indium compounds; light emitting diodes; tin compounds; 1.71 V; 20 mA; 600 nm; AlGaInP-GaInP-GaAs-ITO; AlGaInP-GaInP-GaAs-InSnO; LEDs; current spreading layer; forward voltage; full width at half maximum; peak wavelength; reactive thermally evaporated layers; sheet resistance; window material; Absorption; Conducting materials; Indium tin oxide; Light emitting diodes; MOCVD; Optical devices; Optical materials; Photonic band gap; Substrates; Thermal conductivity;
Conference_Titel :
High Speed Semiconductor Devices and Circuits, 1995. Proceedings., IEEE/Cornell Conference on Advanced Concepts in
Conference_Location :
Ithaca, NY
Print_ISBN :
0-7803-3970-3
DOI :
10.1109/CORNEL.1995.482523
