Title :
Resonant tunneling in tunneling hot-electron transfer amplifier (THETA) structures
Author :
Huber, J.L. ; Kramer, T.A. ; Reed, M.A. ; Moise, T.S. ; Kao, Y.C. ; Seabaugh, A.C. ; Frensley, W.R. ; Fernando, C.L.
Author_Institution :
Yale Univ., New Haven, CT, USA
Abstract :
We have investigated a series of Tunneling Hot-Electron Transfer Amplifiers (THETAs) fabricated from the InGaAlAs system with abrupt collector-base isolation barriers. The turn-on characteristics of these structures can be modified by resonant tunneling, via a confined state in the base, occurring just before the expected ballistic turn-on
Keywords :
III-V semiconductors; aluminium compounds; cryogenic electronics; gallium arsenide; hot electron transistors; indium compounds; resonant tunnelling transistors; 1.4 K; InGaAlAs; InGaAlAs system; THETA structures; abrupt collector-base isolation barriers; ballistic turn-on; base-emitter junction conductance characteristics; common-base characteristics; common-emitter characteristics; confined state; resonant tunneling; tunneling hot-electron transfer amplifier structures; turn-on characteristics; Carrier confinement; Circuits; Digital video broadcasting; Electrons; Instruments; Laboratories; Resonance; Resonant tunneling devices; Temperature; Voltage;
Conference_Titel :
High Speed Semiconductor Devices and Circuits, 1995. Proceedings., IEEE/Cornell Conference on Advanced Concepts in
Conference_Location :
Ithaca, NY
Print_ISBN :
0-7803-3970-3
DOI :
10.1109/CORNEL.1995.482544
