Title :
High uniformity 75 GHz junction HEMTs (JHEMTs) using a dry-etch gate technology
Author :
Shealy, J.B. ; Hafizi, M. ; Thompson, M.A. ; Sun, H.C. ; Hooper, C.E. ; Mishra, U.K. ; Nguyen, L.D.
Author_Institution :
Hughes Res. Labs., Malibu, CA, USA
Abstract :
This paper demonstrates a high uniformity 75 GHz (fτ) GaInAs junction HEMT (JHEMT) technology with ±5 percent variations in the DC and RF parameters using a selective dry-etch gate process. This technology is attractive for the manufacturing of low cost MMICs
Keywords :
III-VI semiconductors; field effect MIMIC; gallium arsenide; high electron mobility transistors; indium compounds; millimetre wave field effect transistors; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; sputter etching; 75 GHz; DC parameters; GaInAs; JHEMTs; MBE; MMICs; RF parameters; dry-etch gate technology; junction HEMTs; selective dry etch; Contact resistance; Electrical resistance measurement; Epitaxial layers; Etching; HEMTs; Indium phosphide; MODFETs; Molecular beam epitaxial growth; Radio frequency; Reproducibility of results;
Conference_Titel :
High Speed Semiconductor Devices and Circuits, 1995. Proceedings., IEEE/Cornell Conference on Advanced Concepts in
Conference_Location :
Ithaca, NY
Print_ISBN :
0-7803-3970-3
DOI :
10.1109/CORNEL.1995.482550
