Current transport in band-gap engineered AlInAs/GaInAs/InP double heterojunction bipolar transistor using chirped superlattice

Author

Nguyen, Chanh ; Liu, Takyiu ; Sun, Hsiang-Chih ; Chen, Mary ; Rensch, David ; Nguyen, Nguyen X. ; Mishra, Umesh

Author_Institution

Hughes Res. Labs., Malibu, CA, USA

fYear

1995

fDate

7-9 Aug 1995

Firstpage

552

Lastpage

562

Abstract

DHBTs with a new base-collector design are presented. The elimination of the potential barrier at the base-collector junction has been achieved by properly combining the electrostatic potential arising from the ionized dopants in the space charge region and the energy band profile of the CSL. A hot electron launcher structure is utilized to achieve a record combination of breakdown voltage and f_T. The effects of CSL parameters on current transport are investigated

Keywords

III-V semiconductors; aluminium compounds; characteristics measurement; electric breakdown; gallium arsenide; heterojunction bipolar transistors; hot carriers; indium compounds; microwave bipolar transistors; microwave power transistors; power bipolar transistors; semiconductor superlattices; AlInAs-GaInAs-InP; CSL parameters; DHBTs; band-gap engineered material; base-collector design; base-collector junction; breakdown voltage; chirped superlattice; current transport; double heterojunction bipolar transistor; electrostatic potential; energy band profile; hot electron launcher structure; ionized dopants; space charge region; Chirp; Double heterojunction bipolar transistors; Electrons; Electrostatics; Indium phosphide; Microwave amplifiers; Photonic band gap; Power amplifiers; Space charge; Superlattices;

fLanguage

English

Publisher

ieee

Conference_Titel

High Speed Semiconductor Devices and Circuits, 1995. Proceedings., IEEE/Cornell Conference on Advanced Concepts in

Conference_Location

Ithaca, NY

ISSN

1079-4700

Print_ISBN

0-7803-3970-3

Type

conf

DOI

10.1109/CORNEL.1995.482552

Filename

482552