DocumentCode :
3170460
Title :
Direct measurement of stress-induced void growth by thermal wave modulated optical reflectance image
Author :
Smith, W.Lee ; Welles, Cliff ; Bivas, A. ; Yost, F.G. ; Campbell, J.E.
Author_Institution :
Therma-Wave Inc., Fremont, CA, USA
fYear :
1990
fDate :
27-29 March 1990
Firstpage :
200
Lastpage :
208
Abstract :
Thermal wave modulated optical reflectance imaging, for imaging stress-induced voids in metallization, is described. This method nondestructively detects, with submicron resolution, voids within metallization without removal of the stress-originating passivation layers. The width, area, location, and a thickness parameter for each void are measured after heat treatment at 673 K for various times. All voids in a selected field of view are automatically labeled and measured at each time step. This removes the tedium of manually measuring individual voids and greatly increases void growth statistics. These statistics are then compared with a stress-driven diffusive model of void growth. This nondestructive technique has allowed observation of two new stress-void phenomena: a growth process akin to Ostwald ripening and the physical movement and agglomeration of voids.<>
Keywords :
VLSI; aluminium; crack detection; failure analysis; measurement by laser beam; metallisation; nondestructive testing; photothermal effects; 673 K; Al metallisation; NDT; Ostwald ripening; agglomeration of voids; direct measurement; growth process; heat treatment; imaging stress-induced voids; metallization; nondestructive technique; physical movement; stress-driven diffusive model; stress-induced void growth; stress-originating passivation layers; stress-void phenomena; submicron linewidths; submicron resolution; subsurface voids; thermal wave modulated optical reflectance image; voids within metallization; Area measurement; Metallization; Optical imaging; Optical modulation; Passivation; Photothermal effects; Reflectivity; Statistics; Stress measurement; Thermal stresses;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium, 1990. 28th Annual Proceedings., International
Conference_Location :
New Orleans, LA, USA
Type :
conf
DOI :
10.1109/RELPHY.1990.66087
Filename :
66087
Link To Document :
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