Semiconductor ring lasers fabricated with UV laser-assisted cryo-etching

Author

Tsai, Chia-Ho ; Lee, Chun-Hao ; Chiang, Hsin-Jiun ; Yang, C.C. ; Shih, M.C. ; Chen, B.C. ; Chuang, T.J.

Author_Institution

Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan

Volume

1

fYear

1997

fDate

10-13 Nov 1997

Firstpage

5

Abstract

Semiconductor circular ring lasers have attracted quite much attention because of the higher side-mode suppression ratio and the versatility of integration with other components. In order to reduce the scattering loss in the curved waveguide of such a ring laser, the etched wall of the waveguide ridge must be highly vertical and smooth. In this paper, we present the results of our GaAs-AlGaAs quantum well circular ring lasers which were etched with the UV laser-assisted cryo-etching technique

Keywords

III-V semiconductors; aluminium compounds; cryogenics; etching; gallium arsenide; laser modes; light scattering; optical fabrication; optical losses; quantum well lasers; ridge waveguides; ring lasers; waveguide lasers; GaAs-AlGaAs; GaAs-AlGaAs quantum well circular ring lasers; UV laser-assisted cryo-etching; UV laser-assisted cryo-etching technique; curved waveguide; etched wall; scattering loss; semiconductor circular ring lasers; semiconductor ring laser fabrication; side-mode suppression ratio; waveguide ridge; Dry etching; Laser theory; Lasers and electrooptics; Lighting; Quantum well lasers; Ring lasers; Semiconductor lasers; Semiconductor waveguides; Vertical cavity surface emitting lasers; Waveguide lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE

Conference_Location

San Francisco, CA

ISSN

1092-8081

Print_ISBN

0-7803-3895-2

Type

conf

DOI

10.1109/LEOS.1997.630489

Filename

630489