Nonlinear Analysis and Structure Optimization of a DAR IMPATT Diode

Author

Zemliak, A. ; Cabrera, S. ; Machusskiy, E.

Author_Institution

Puebla Autonomous Univ., Puebla

fYear

2008

fDate

3-5 March 2008

Firstpage

139

Lastpage

143

Abstract

The analysis and optimization of the n⁺pvnp⁺ avalanche diode have been realized on basis of the nonlinear model and special optimization procedure. This type of the diode that was named as double avalanche region (DAR) IMPATT diode includes two avalanche regions inside the diode. The admittance and energy characteristics of the DAR diode were analyzed in very wide frequency band from 30 up to 360 GHz and were optimized for the second frequency band near the 220 GHz.

Keywords

IMPATT diodes; millimetre wave diodes; optimisation; semiconductor device models; DAR IMPATT diode; admittance characteristics; avalanche diode; double avalanche region IMPATT diode; energy characteristics; frequency 30 GHz to 360 GHz; nonlinear analysis; nonlinear model; structure optimization; Boundary conditions; Computer crime; Delay effects; Neodymium; Nonlinear equations; Poisson equations; Power generation; Radio frequency; Semiconductor diodes; Semiconductor process modeling; IMPATT DAR diode; nonlinear analysis; structure optimization;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics, Communications and Computers, 2008. CONIELECOMP 2008, 18th International Conference on

Conference_Location

Puebla

Print_ISBN

978-0-7695-3120-5

Type

conf

DOI

10.1109/CONIELECOMP.2008.17

Filename

4470526