Title :
Triangular ring laser in InP/InGaAsP
Author :
Ji, C. ; Leary, M.H. ; Ballantyne, J.M.
Author_Institution :
Dept. of Electr. Eng., Cornell Univ., Ithaca, NY, USA
Abstract :
A fabricated InP-InGaAsP triangular ring laser is shown. Light is coupled out through the facet at bottom. The two nearly total internal reflection (TIR) mirrors, the structural angle, and the output angle, are also defined. Triangular ring lasers of various cavity lengths and corresponding Fabry-Perots were fabricated on the same chip
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser cavity resonators; laser mirrors; optical couplers; optical fabrication; ring lasers; semiconductor lasers; Fabry-Perots; InP-InGaAsP; InP-lnGaAsP; cavity lengths; laser facet; optical fabrication; output angle; semiconductor lasers; structural angle; total internal reflection laser mirrors; triangular ring laser; Etching; Fabry-Perot; Indium phosphide; Laser modes; Laser noise; Power generation; Power lasers; Ring lasers; Semiconductor lasers; Waveguide lasers;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-3895-2
DOI :
10.1109/LEOS.1997.630490
