Experimental demonstration of high TM reflectivity in GaAs based GIRO-gratings in the wavelength region of 9-11 μm

Author

Goeman, S. ; Dhoedt, B. ; Caekebeke, K. ; Verstuyft, S. ; Baets, R. ; Van Daele, P. ; Nieuborg, N. ; Panajotov, K. ; Thienpont, H.

Author_Institution

Dept. of Inf. Technol., Ghent Univ., Belgium

Volume

1

fYear

1997

fDate

10-13 Nov 1997

Firstpage

13

Abstract

In this paper we present the first experimental result of the GIRO-principle (giant reflectivity to 0 order) showing a semiconductor-air diffraction grating with high TM reflectivity and low TE reflectivity under normal incidence, as predicted by theory

Keywords

III-V semiconductors; diffraction gratings; gallium arsenide; optical design techniques; optical fabrication; reflectivity; semiconductor devices; semiconductor technology; 9 to 11 mum; GIRO-principle; GaAs; GaAs based GIRO-gratings; giant reflectivity; high TM reflectivity; low TE reflectivity; normal incidence; semiconductor-air diffraction grating; Gallium arsenide; Gratings; Optical interferometry; Optical polarization; Optical refraction; Optical surface waves; Optical variables control; Reflectivity; Tellurium; Wavelength measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE

Conference_Location

San Francisco, CA

ISSN

1092-8081

Print_ISBN

0-7803-3895-2

Type

conf

DOI

10.1109/LEOS.1997.630493

Filename

630493